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  february 2007 rev 3 1/13 13 STD30NF03LT n-channel 30v - 0.017 ? - 30a - dpak stripfet? ii power mosfet general features low threshold drive description this power mosfet is th e latest development of stmicroelectronics unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications switching application internal schematic diagram type v dss r ds(on) i d STD30NF03LT 30v < 0.025 ? 30a dpak 1 3 www.st.com order codes part number marking package packaging STD30NF03LTt4 d30nf03lt dpak tape & reel
contents STD30NF03LT 2/13 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD30NF03LT electrical ratings 3/13 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain-gate voltage (r gs = 20 k ? )30v v gs gate- source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25c 30 a i d drain current (continuous) at t c = 100c 21 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 120 a p tot total dissipation at t c = 25c 50 w derating factor 0.33 w/c dv/dt (3) 3. i sd 30a, di/dt 400a/s, v dd v (br)dss , t j t jmax. peak diode recovery voltage slope 4 v/ns e as (4) 4. starting t j = 25 c, i d = 15a v dd = 25v single pulse avalanche energy 450 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature table 2. thermal data rthj-case thermal resistance junction-case max 3.0 c/w rthj-amb thermal resistance ju nction-ambient max 100 c/w t j maximum lead temperature for soldering purpose 275 c table 3. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 40 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 15 v) 2.3 j
electrical characteristics STD30NF03LT 4/13 2 electrical characteristics (t case =25c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs =0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 6v, i d = 15a v gs = 105v, i d = 15a 0.025 0.017 0.035 0.025 ? ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward transconductance v ds = 15v, i d = 15a 30 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1mhz, v gs = 0 750 280 70 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 15v, i d = 15a r g =4.7 ? v gs = 6v (see figure 12 ) 15 30 20 10 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15v, i d = 30a, v gs = 6v, r g =4.7 ? (see figure 13 ) 13 5.5 5 18 nc nc nc
STD30NF03LT electrical characteristics 5/13 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 30 120 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 30a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30a, di/dt = 100a/s, v dd = 20v, t j = 150c (see figure 14 ) 35 38 2.5 ns nc a
electrical characteristics STD30NF03LT 6/13 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characteristics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
STD30NF03LT electrical characteristics 7/13 figure 7. gate charge vs. gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs. temperature figure 10. normalized on resistance vs. temperature figure 11. normalized bv dss vs. temperature
test circuit STD30NF03LT 8/13 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STD30NF03LT package mechanical data 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STD30NF03LT 10/13 packing mechanical data dim. mm. inch min. typ max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b4 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 d1 5.1 0.200 e 6.4 6.6 0.252 0.260 e1 4.7 0.185 e 2.28 0.090 e1 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l 1 0.039 (l1) 2.8 0.110 l2 0.8 0.031 l4 0.6 1 0.023 0.039 r 0.2 0.008 v2 0 8 0 8 dpak mechanical data 0068772-f
STD30NF03LT package mechanical data 11/13 tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history STD30NF03LT 12/13 5 revision history table 7. revision history date revision changes 15-feb-2005 1 first release 01-jul-2006 2 new template, no content change 20-feb-2007 3 typo mistake on page 1
STD30NF03LT 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorize representative of st, st products are not designed, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems, where failure or malfunction may result in personal injury, death, or severe property or environmental damage. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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